**VBsemi SI2377DS-T1-GE3-VB**

- **Package type:** SOT23-3
- **Channel type:** P-Channel
- **Maximum withstand voltage:** -30V
- **Maximum leakage current:** -5.6A
- **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V
- **Threshold voltage (Vth):** -1V

**Detailed parameter description:**
SI2377DS-T1-GE3-VB is a VBsemi brand P-Channel trench power MOSFET, using SOT23-3 package. It has a maximum withstand voltage of -30V, a maximum leakage current of -5.6A, and an on-resistance of 47mΩ at 10V and 20V. The threshold voltage is -1V, suitable for circuit design requiring high-performance P-Channel MOSFET.

**Application Introduction:**
This device is suitable for a variety of power management and power amplification applications, especially in circuits requiring P-Channel MOSFET, it can provide efficient and reliable performance.

**Application Fields:**
1. **Power Switch:** Used in switching power supplies and voltage regulators.
2. **Motor Drive:** Used for load switches in motor control.
3. **LED Lighting:** Suitable for LED drive circuits.
4. **Charging Management:** Charging management circuits in mobile devices and power tools.
5. **Power Inverter:** Used in inverters and DC-AC converters.

**Note:** In the design, please carefully select and use the device according to the specific circuit requirements and working conditions.