- **Parameter Description:** - Type: P—Channel MOSFET - Rated voltage (V_DS): -30V - Rated current (I_D): -5.6A - Static resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V - Threshold voltage (Vth): -1V
- **Package:** - Type: SOT23-3
- **Application Introduction:** - High-performance P—Channel MOSFET, designed for applications requiring high power density and low on-resistance.
- **Application fields:** - Power modules - Battery management systems - Motor controllers - Automotive electronics
- **Features:** - Excellent conduction characteristics - Suitable for high power density design - SOT23-3 package is suitable for small electronic devices
*Note: The above information is for reference only. Specific applications need to be considered according to system requirements and design. *
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