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UT2321G-AE3-R-VB is a SOT23-3 packaged P-MOS tube Datasheet parameter video expl
Model: UT2321G-AE3-R-VB

Silkscreen: VB2355

Brand: VBsemi

Parameters:
- Package: SOT23-3
- Channel type: P-Channel
- Rated voltage (Vds): -30V
- Rated current (Id): -5.6A
- On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

Application introduction:
This device is suitable for SOT23-3 package and belongs to P-Channel trench MOSFET. Its main features include low on-resistance and suitability for lower voltage applications.

Fields and module applications:
1. **Power management module:**
- Used for low voltage, low power power management circuits.

2. **Battery management system:**
- Suitable for portable devices, battery charge and discharge management.

3. **DC-DC converter:**
- Used to design small DC-DC converters to achieve power conversion.

4. **Current control application:**
- Used in circuits that require P-Channel trench MOSFET for current control.

Please note that in specific applications, ensure that the operating conditions of the device meet the requirements in its specification sheet.

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