**DMG3415UFY4-7-VB**

- **Silkscreen:** VB2355
- **Brand:** VBsemi
- **Parameters:**
- Package type: SOT23-3
- Channel type: P—Channel
- Maximum withstand voltage: -30V
- Maximum drain current: -5.6A
- On-state resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
- Threshold voltage (Vth): -1V

- **Application introduction:**
DMG3415UFY4-7-VB is a P—Channel power MOSFET packaged in SOT23-3. Its features include low on-state resistance and suitability for load switching and power management applications.

- **Detailed parameter description:**
1. **Package Type:** SOT23-3, which is a small surface mount package suitable for dense circuit board design.
2. **Channel Type:** P-Channel, indicating that this is a P-channel MOSFET.
3. **Maximum Drain-Source Voltage:** -30V, which is the maximum drain voltage that the device can withstand.
4. **Maximum Drain Current:** -5.6A, indicating the maximum drain current that can pass.
5. **On-state resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V, indicating the maximum value of the on-state resistance under a given gate-source voltage.
6. **Threshold Voltage:** -1V, which is the gate-source voltage at which the device starts to conduct.

- **Application Areas:**
1. **Load Switching:** Due to its P-channel nature and moderate current capacity, it is suitable for load switching circuits, such as power management units (PMUs).
2. **Power Management Modules:** Used to build power management modules, such as power switches and current controllers.

- **Module Application Examples:**
1. **Power Switch Module:** DMG3415UFY4-7-VB can be used to design compact power switch modules for various portable devices.
2. **Power Management Unit (PMU):** In mobile devices, as part of the PMU, it controls the switching of power and provides effective power consumption management.

Please note that the above are only general explanations and application suggestions for the given parameters. Further consideration of circuit requirements and system specifications is required for specific design.