Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-60V |
20（±V） |
-1.7V |
-0.5A |
|
4000(mΩ) |
3000(mΩ) |
|
**VBsemi 2SJ461A-T1B-A-VB** - **Silkscreen: ** VB264K - **Brand: ** VBsemi - **Parameters: ** - Package: SOT23 - Channel type: P—Channel - Rated voltage: -60V - Rated current: -0.5A - On-state resistance (RDS(ON)): 3000mΩ@VGS=10V, 4000(mΩ)@VGS=4.5V; VGS=±20V - Threshold voltage (Vth): -1.7V **Package: ** SOT23 **Detailed parameter description: ** - **Channel type: ** P—Channel, indicating that this is a P-channel field effect transistor. - **Rated voltage: ** -60V, indicating that the maximum voltage that the transistor can withstand is -60V. - **Rated current: ** -0.5A, indicating that the maximum rated current of the transistor is -0.5A. - **On-state resistance (RDS(ON)): ** 3000mΩ@VGS=10V, 4000(mΩ)@VGS=4.5V; VGS=±20V, indicating that at a given gate-source voltage, the resistance of the transistor when it is turned on is 3000 milliohms. - **Threshold voltage (Vth): ** -1.7V, indicating the gate-source voltage threshold at which the transistor starts to turn on.
Domain and module applications：
**Example:** This device can be used in power switch modules, power amplifiers, and DC-DC converters. For example, in a power management module, it can be used to control load switches to improve efficiency. In an amplifier, it may be used to drive an audio amplifier circuit. In a DC-DC converter, it can be used to achieve efficient power conversion. **Note:** In specific applications, please refer to the device's data sheet for more detailed electrical performance and design information.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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