Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-60V |
20（±V） |
-1.7V |
-0.5A |
|
4000(mΩ) |
3000(mΩ) |
|
**2SJ185-T1B-VB Transistor** - **Silkscreen:** VB264K - **Brand:** VBsemi - **Parameters:** - Package:** SOT23 - Polarity: P—Channel - Maximum withstand voltage: -60V - Maximum current: -0.5A - On-resistance: RDS(ON)=3000mΩ @ VGS=10V, 4000(mΩ)@VGS=4.5V; VGS=±20V - Threshold voltage: Vth=-1.7V - **Package:** SOT23
Domain and module applications：
2SJ185-T1B-VB is suitable for a variety of electronic devices and modules, including but not limited to: 1. **Power management module:** Due to its P-Channel characteristics, it can be used in power management modules to achieve efficient current control and power consumption management. 2. **Signal amplifier:** In the signal amplification circuit, it provides reliable signal amplification function through its low threshold voltage and moderate current capability. 3. **Battery protection circuit:** Suitable for battery protection circuit to achieve effective control of battery charging and discharging. Please note that the above are only examples, and actual applications need to be adjusted according to specific design requirements and circuit conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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