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4563GM-VB Product details

Product introduction:

The 4563GM-VB is an N+P channel MOSFET with high voltage withstand capability and low on-resistance. Its dual channel design makes it suitable for a wide range of applications, providing reliable power switching and regulation functions.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+P-Channel ±60V 1.8/-1.7V 5.3/-4.9A 29/60(mΩ) 26/55(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+P-Channel ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+P-Channel ±60V 1.8/-1.7V 5.3/-4.9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+P-Channel
**VBsemi 4563GM-VB** - **Silkscreen:** VBA5638 - **Brand:** VBsemi - **Parameters:** - Channel type: N+P channel - Rated voltage: ±60V - Maximum current: 5.3A (positive polarity), -4.9A (negative polarity) - On resistance: RDS(ON)=26/55(mΩ) @ VGS=10V,29/60(mΩ)@VGS=4.5V; VGS=±20V - Gate-source voltage threshold: ±1.9V - **Package:** SOP8

Domain and module applications:

**Application areas and module examples:** 1. **Industrial automation:** In industrial motor control, power management, and smart sensors, the high voltage and low on-resistance characteristics of the 4563GM-VB provide stable and reliable performance. 2. **Electric vehicle charging piles:** As a switching element in a charging pile, the 4563GM-VB can withstand high voltage and provide efficient power conversion, ensuring a safe and fast charging process. 3. **LED lighting:** As a switch for LED drivers, the 4563GM-VB can effectively control current and power, improving the efficiency and reliability of lighting systems. 4. **Power modules:** In switching power supplies and DC-DC converters, the 4563GM-VB can achieve efficient energy conversion and stable voltage output to meet the power needs of various electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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