Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
45(mΩ) |
35(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P-Channel |
|
|
|
|
|
|
|
**Product Features:** - 2 P-Channel MOSFETs - Operating voltage: -30V - Maximum continuous drain current: -7.3A - Typical drain-source on-resistance: 35mΩ at VGS=10V, 45(mΩ)@VGS=4.5V; and VGS=20V) - Gate-source threshold voltage: -1.7V - Package: SOP8
Domain and module applications:
Due to its dual P-Channel characteristics, VBsemi MMDFS2P102R2G-VB MOSFET has broad application prospects in power management, current control, power amplification and other fields. The following are some typical application scenarios: 1. **Power management module**: In the power management module, this MOSFET can be used for functions such as power switching, power conversion and power distribution. Its excellent electrical performance and reliability can ensure the stability and efficiency of the power system. 2. **Current control module**: In circuits that require precise control of current, VBsemi MMDFS2P102R2G-VB MOSFET can be used for functions such as current limiting, current regulation and current detection. Its low drain resistance and high carrying capacity ensure the accuracy and stability of current control. 3. **Power amplifier module**: In the power amplifier circuit, this MOSFET can be used in the output stage of the power amplifier, responsible for tasks such as power amplification and signal driving. Its excellent performance can improve the output power and sound quality of the power amplifier. From the above examples, it can be seen that VBsemi MMDFS2P102R2G-VB MOSFET has broad application prospects in power management, current control, power amplification and other fields, and can provide strong support for performance improvement and function realization of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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