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MMDFS2P102R2G-VB Product details

Product introduction:

This VBsemi MMDFS2P102R2G-VB MOSFET has two P-Channel channels and is suitable for applications under negative voltage. It can withstand an operating voltage of up to -30V, while having a large maximum continuous drain current of -7.3A, showing excellent performance. Its typical drain-source on-resistance is 35mΩ, which can be achieved at VGS=10V, 45(mΩ)@VGS=4.5V; and VGS=20V. The gate-source threshold voltage is -1.7V, which is suitable for various circuit control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A 45(mΩ) 35(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P-Channel
**Product Features:** - 2 P-Channel MOSFETs - Operating voltage: -30V - Maximum continuous drain current: -7.3A - Typical drain-source on-resistance: 35mΩ at VGS=10V, 45(mΩ)@VGS=4.5V; and VGS=20V) - Gate-source threshold voltage: -1.7V - Package: SOP8

Domain and module applications:

Due to its dual P-Channel characteristics, VBsemi MMDFS2P102R2G-VB MOSFET has broad application prospects in power management, current control, power amplification and other fields. The following are some typical application scenarios: 1. **Power management module**: In the power management module, this MOSFET can be used for functions such as power switching, power conversion and power distribution. Its excellent electrical performance and reliability can ensure the stability and efficiency of the power system. 2. **Current control module**: In circuits that require precise control of current, VBsemi MMDFS2P102R2G-VB MOSFET can be used for functions such as current limiting, current regulation and current detection. Its low drain resistance and high carrying capacity ensure the accuracy and stability of current control. 3. **Power amplifier module**: In the power amplifier circuit, this MOSFET can be used in the output stage of the power amplifier, responsible for tasks such as power amplification and signal driving. Its excellent performance can improve the output power and sound quality of the power amplifier. From the above examples, it can be seen that VBsemi MMDFS2P102R2G-VB MOSFET has broad application prospects in power management, current control, power amplification and other fields, and can provide strong support for performance improvement and function realization of electronic equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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