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IRF9953TRPBF-VB Product details

Product introduction:

Application Introduction: This P-Channel MOSFET is suitable for applications that require a P-Channel channel, usually used in power switches and power management circuits. Its low on-resistance and high switching speed make it perform well in high-frequency switching power supplies.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A 45(mΩ) 35(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-P+P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-P+P-Channel -30V -1.7V -7.3A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-P+P-Channel
VBsemi IRF9953TRPBF-VB P-Channel MOSFET Parameters: - Package: SOP8 - Channel type: P-Channel - Maximum voltage: -30V - Maximum current: -7.3A - RDS(ON):35mΩ @ VGS=10V,45(mΩ)@VGS=4.5V;, VGS=20V - Threshold voltage: -1.7V

Domain and module applications:

Application Areas Modules: 1. Power switch: used for high-efficiency power switch design requiring P-Channel channel. 2. DC-DC converter: realizes efficient DC-DC conversion in power management circuit. 3. Battery protection circuit: suitable for overcurrent protection in battery management system. Function: 1. Provides P-Channel channel, suitable for power switch design with different polarities. 2. Suitable for high-frequency switching power supply, providing efficient power management. 3. Realizes overcurrent protection function in battery management system. Precautions for use: 1. Please operate according to the maximum ratings provided in the data sheet to avoid damage to the device. 2. Consider appropriate heat dissipation measures in the design to ensure stable operation of the device at the rated operating temperature. 3. Avoid exceeding the maximum rated current and voltage to prevent overloading of the device. 4. During use, pay attention to electrostatic protection to avoid damage to sensitive components.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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