Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
45(mΩ) |
35(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P-Channel |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P-Channel |
-30V |
|
-1.7V |
-7.3A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P-Channel |
|
|
|
|
|
|
|
Model: HAT1024RJ-VB Silkscreen: VBA4338 Brand: VBsemi Parameters: - Type: 2 P-channel - Maximum withstand voltage: -30V - Maximum current: -7.3A - Static on resistance (RDS(ON)): 35mΩ @ 10V, 45mΩ @ 4.5V - Gate-source voltage (Vgs): 20V (±V) - Threshold voltage (Vth): -1.7V - Package type: SOP8
Domain and module applications:
1. Power modules: This MOSFET can be used for power switches in power modules to help improve the efficiency of power management, and is suitable for portable devices, embedded systems, and power inverters. 2. DC-DC converters: The HAT1024RJ-VB can be used in DC-DC converters to convert one voltage to another, and is suitable for battery-powered devices, electronic terminals, and communication equipment. 3. Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance. 4. Automotive electronics: Due to its low on-resistance and voltage characteristics, this MOSFET is also suitable for automotive electronic systems such as vehicle power management and drive control. 5. Low-power electronics: Due to its low on-resistance and low voltage characteristics, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical devices, and wireless communication modules. The characteristics of the HAT1024RJ-VB make it suitable for a variety of medium-power electronic applications, especially when a P-channel MOSFET is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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