**Application Introduction:** SQ2308BES-T1-E3-VB is an N-Channel field effect transistor suitable for a variety of power control and switching applications.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
**VBsemi SQ2308BES-T1-E3-VB Detailed parameter description:** - **Model:** SQ2308BES-T1-E3-VB - **Silkscreen:** VB1695 - **Brand:** VBsemi - **Package:** SOT23-3 - **Channel type:** N-Channel - **Maximum withstand voltage:** 60V - **Maximum current:** 4A - **On-resistance (RDS(ON)):** 75mΩ @ VGS=10V, 86mΩ@VGS=4.5V; -VGS=±20V - **Threshold voltage (Vth):** 1.7V
1. **Power switch:** As part of the power switch, SQ2308BES-T1-E3-VB can be used in power management circuits to achieve efficient power control and management. 2. **LED lighting driver:** Suitable for current control and driving in LED lighting systems, especially in LED driver modules that require high current and low on-resistance. 3. **Battery protection:** Used to design battery protection modules to ensure reliable control of battery charging and discharging. 4. **Motor control:** In applications where motor current needs to be controlled, SQ2308BES-T1-E3-VB can be used as part of the motor control circuit to achieve precise current regulation. 5. **Current amplifier:** Suitable for current amplification circuits that require N-Channel MOSFETs, such as audio amplifiers and power amplifiers. The above are some possible application scenarios, and the specific selection should be based on project requirements and circuit design requirements.
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