Application Introduction: SI2310-VB is an N-channel metal oxide semiconductor field effect transistor (MOSFET) with high voltage tolerance and moderate current tolerance, low drain-source resistance and adjustable gate-source threshold voltage. These characteristics make it widely used in modules in various electronic fields.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
Parameter description: - Channel type: N-channel - Rated voltage: 60V - Maximum current: 4A - Static drain-source resistance (RDS(ON)): 75mΩ@10V, 86mΩ@VGS=4.5V;, 96mΩ@4.5V - Gate-source voltage (±Vgs): ±20V - Gate-source threshold voltage (Vth) range: 1V to 3V - Package type: SOT23-3
1. Power module: SI2310-VB can be used in low to medium power power switch modules to provide power conversion and voltage regulation functions. Suitable for a variety of consumer electronics, communication equipment and industrial equipment. 2. Current control: In the current control module, it can be used for current control, current switching and power management, suitable for motor control, power management and battery protection. 3. Amplification and signal switching: In the amplification and signal switching module, SI2310-VB can be used for signal amplification and switching functions, suitable for applications such as audio amplifiers, communication interfaces and sensor interfaces. 4. Power management: It can also be used in power management modules to achieve efficient energy management, voltage regulation and current protection, suitable for portable electronic devices, battery management systems and chargers. In short, SI2310-VB is a versatile N-channel MOSFET suitable for electronic modules in multiple fields, providing power management, current control, signal amplification and power management functions.
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