**Application Brief:** SI2308ADS-T1-GE3-VB is an N-channel MOSFET suitable for a variety of power supply and power management applications. Its high rated voltage, high current carrying capability and low static drain-source resistance make it an ideal choice in electronic device design.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
Model: SI2308ADS-T1-GE3-VB Silkscreen: VB1695 Brand: VBsemi Package: SOT23-3 **Detailed parameter description:** - Type: N-channel MOSFET - Rated voltage (VDS): 60V - Rated current (ID): 4A - Static drain-source resistance (RDS(ON)): 75mΩ @ VGS = 10V, 86mΩ@VGS=4.5V; VGS = ±20V - Threshold voltage (Vth): 1.7V
**Application fields and module examples:** 1. **Power module:** Since SI2308ADS-T1-GE3-VB has a high rated voltage and current carrying capacity, it is suitable for the design of power modules, such as switching power supplies, DC-DC converters, etc. 2. **Motor drive:** In applications where motor control is required, SI2308ADS-T1-GE3-VB can be used as a power switching element in motor drive circuits. 3. **LED lighting:** Applicable to LED lighting drive circuits to help achieve efficient power conversion and brightness control. 4. **Battery management system:** In systems that need to manage battery charging and discharging, SI2308ADS-T1-GE3-VB can be used in battery protection circuits to achieve efficient battery management. 5. **Industrial automation:** Used in power switching circuits in industrial automation equipment to provide reliable power control. Overall, SI2308ADS-T1-GE3-VB is suitable for various application scenarios that require high-performance MOSFETs, especially in fields that require high voltage and current, and can provide reliable power switching functions for the system.
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