Application Introduction: G2308-VB is an N-Channel power field effect transistor in SOT23-3 package. It has a low on-resistance (RDS(ON)) of 75mΩ at 10V, 86mΩ@VGS=4.5V and ±20V, a maximum voltage tolerance of 60V, a maximum current of 4A, and an adjustable threshold voltage between 1.7V. This makes the product suitable for a variety of application scenarios.
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| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-N-Channel | 60V | 20（±V） | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
Parameter description: - Model: G2308-VB - Silk screen: VB1695 - Brand: VBsemi - Package: SOT23-3 - Channel type: N—Channel - Maximum voltage: 60V - Maximum current: 4A - RDS(ON) (internal resistance when on): 75mΩ @ VGS=10V, 86mΩ@VGS=4.5V; -VGS=±20V - Threshold voltage (Vth): 1.7V
Example Applications: 1. **Power Switch Module**: The high voltage withstand capability and low on-resistance of G2308-VB make it an ideal choice in power switch modules for efficient power switch control. 2. **Current Control and Regulation Module**: Due to its N-Channel channel type and adjustable threshold voltage, this transistor is suitable for designing current control and regulation modules to meet various current management needs. 3. **Power Inverter Module**: In power inverter, G2308-VB can be used to achieve efficient power inverter control, suitable for applications such as solar inverters. Please note that the specific application depends on the system requirements and design parameters, and it is recommended to perform appropriate circuit design and testing in actual applications.
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