Application Introduction: CES2362-VB is an N-Channel MOSFET suitable for low voltage, low power switching power supply and signal switching applications.
VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
---|---|---|---|---|---|---|---|---|---|
SOT23-3 | Single-N-Channel | 60V | 20(±V) | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
Detailed parameter description: - Model: CES2362-VB - Silk screen: VB1695 - Brand: VBsemi - Package: SOT23-3 - Channel type: N-Channel - Rated voltage: 60V - Rated current: 4A - On-resistance: RDS(ON) = 75mΩ @ VGS=10V, 86mΩ@VGS=4.5V; -VGS=±20V - Threshold voltage: Vth = 1.7V
Fields of use and functions: 1. Power switch: In low-power power switch circuits, it is used to control the on and off of the power supply, and is suitable for portable electronic devices. 2. Signal switch: In various signal switch circuits, it is used to amplify and switch signals, and is suitable for communication equipment and portable audio equipment. 3. Power management module: Used in low-power power management circuits, it can achieve effective control and management of power supply and improve system efficiency. Precautions for use: 1. Strictly follow the electrical parameters and packaging information in the product specification. 2. Consider heat dissipation in the design to ensure that the device operates within a safe temperature range. 3. Pay attention to the matching of input and output voltages to prevent exceeding the maximum rating of the device. 4. Ensure proper power and ground connections to ensure normal operation and prevent damage. 5. Follow relevant ESD (electrostatic discharge) protection measures during use to prevent damage to sensitive devices.
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