**Application Introduction:** 2310AGN-VB is an N-Channel field effect transistor in SOT23-3 package. Its main features include 60V maximum withstand voltage, 4A maximum current and low on-resistance (75mΩ @ VGS=10V, 86mΩ@VGS=4.5V; -VGS=±20V), and 1.7V threshold voltage. This makes it excellent in a variety of applications.
VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
---|---|---|---|---|---|---|---|---|---|
SOT23-3 | Single-N-Channel | 60V | 20(±V) | 1.7V | 4A | 86(mΩ) | 75(mΩ) |
Product model: 2310AGN-VB Silk screen: VB1695 Brand: VBsemi **Detailed parameter description:** - Package type: SOT23-3 - Channel type: N-Channel - Maximum withstand voltage: 60V - Maximum current: 4A - On resistance (RDS(ON)): 75mΩ @ VGS=10V, 86mΩ@VGS=4.5V; -VGS=±20V - Threshold voltage (Vth): 1.7V
**Application fields:** 2310AGN-VB is suitable for various fields, especially in scenarios where N-Channel type field effect transistors are required, such as: 1. **Power management module:** With high maximum withstand voltage and moderate current characteristics, it can be used in power management modules to ensure stable power output. 2. **Power tools:** Due to low on-resistance, it is suitable for applications such as power tools that require high current drive. 3. **Automatic control system:** Suitable for automatic control systems that require N-Channel field effect transistors, such as automated industrial equipment. These application fields give full play to the advantages of 2310AGN-VB in power supply, control and electric drive.
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