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FDS8447-VB Product details

Product introduction:

### FDS8447-VB Product Introduction FDS8447-VB is an N-channel field effect transistor launched by VBsemi, mainly used in medium power applications. It adopts SOP8 package, with 40V rated voltage and 10A rated current. The on-resistance of the device is 14mΩ (VGS=10V) and 16mΩ (VGS=4.5V) at different gate-source voltages, the gate-source voltage can reach ±20V, and the turn-on voltage (Vth) is 1.8V.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-N-Channel 40V 1.8V 10A 16(mΩ) 14(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-N-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-N-Channel 40V 1.8V 10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-N-Channel 40V 1.8V 10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-N-Channel
### FDS8447-VB detailed parameters - **Package**: SOP8 - **Channel type**: N-channel - **Maximum rated voltage**: 40V - **Maximum rated current**: 10A - **On-resistance**: - When VGS=10V: 14mΩ - When VGS=4.5V: 16mΩ - **Maximum gate-source voltage**: ±20V - **Turning point voltage (gate-source voltage)**: 1.8V

Domain and module applications:

### Application fields and module examples 1. **Power switch**: Due to its low on-resistance and moderate rated voltage and rated current, FDS8447-VB is suitable for power switch modules, such as power switches, DC motor drives, etc. 2. **Power management**: In some power management modules that need to handle large currents, FDS8447-VB can be used as a power switch to help achieve efficient energy consumption control. 3. **Lighting**: Due to its high rated current and moderate rated voltage, FDS8447-VB is also suitable for some modules that need to control lighting equipment, such as LED light controllers. In addition, FDS8447-VB can also play a role in other medium-power applications that require N-channel field-effect transistors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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