Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
Model: UT3419G-AE3-R-VB Silkscreen: VB2290 Brand: VBsemi Detailed parameter description: - Channel type: P-channel - Rated voltage: -20V - Maximum current: 4A - Static on-resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @4.5V, 83mΩ@2.5V - Threshold voltage (Vth): -0.81V - Package type: SOT23-3
Domain and module applications：
1. Power Management: The UT3419G-AE3-R-VB can be used in power switches, voltage regulators, and power management applications to support efficient power transmission and management. 2. Battery Protection: In battery management systems, this MOSFET can be used for battery protection and charge and discharge management to ensure battery safety and performance. 3. Low-voltage Circuit Breaker: The UT3419G-AE3-R-VB can be used in low-voltage circuit breakers to quickly cut off the circuit for electronic equipment and industrial applications. 4. Power Inverter: This MOSFET can be used in power inverters to convert DC power to AC power for solar inverters and UPS systems. 5. Signal Switch: In various signal switch applications, the UT3419G-AE3-R-VB can be used to control the on and off of signals for communication equipment and automation systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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