Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
**TSM2301ACX-RF-VB Detailed parameter description:** - **Silkscreen:** VB2290 - **Brand:** VBsemi - **Package:** SOT23-3 - **Channel type:** P—Channel - **Maximum withstand voltage:** -20V - **Maximum drain current:** -4A - **On-resistance:** RDS(ON) = 80（mΩ）@VGS=2.5V、65(mΩ)@VGS=4.5V、60(mΩ)@VGS=10V； VGS=12V - **Threshold voltage:** Vth = -0.81V
Domain and module applications：
**Examples:** 1. **RF Power Amplifier Module:** TSM2301ACX-RF-VB can be used in RF power amplifier modules to amplify RF signals by controlling the charge channel. 2. **RF Switch Module:** In applications where RF signals need to be switched, TSM2301ACX-RF-VB can be used as an RF switch to switch RF signals. 3. **RF Modulation Module:** Due to its optimized RF characteristics, TSM2301ACX-RF-VB is suitable for RF modulation modules to ensure efficient performance in RF environments. 4. **Communication Equipment:** Due to the small design of the SOT23-3 package, TSM2301ACX-RF-VB can be widely used in various communication equipment, such as RF modules, communication terminals, etc. These examples illustrate the applicability of TSM2301ACX-RF-VB in RF applications, and its characteristics make it an ideal choice in these modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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