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Si2399DS-T1-GE3-VB Product details

Product introduction:

Application Introduction: Si2399DS-T1-GE3 is a P-channel MOSFET suitable for applications that require current control. Due to its low on-resistance (RDS(ON)), it can effectively reduce conduction losses and perform well in circuits that require high-efficiency conversion. Commonly used in power management, DC-DC conversion and other circuits, such as adapters, battery chargers, etc. Advantages: The main advantages of Si2399DS-T1-GE3 include: Low on-resistance: With low on-resistance, power loss and heat generation are reduced. Reliability: VBsemi is a well-known semiconductor brand, and its products are strictly quality controlled and have high reliability. Package: The small SOT23-3 package is suitable for designs with limited space.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
Si2399DS-T1-GE3 parameters: P-channel, -20V, -4A, RDS(ON), 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @4.5V, 83mΩ@2.5V, 12Vgs(±V); -0.81Vth(V); SOT23-3

Domain and module applications:

Applicable modules: Si2399DS-T1-GE3 can be used in DC-DC converter circuits in mobile phone charging modules. When charging a mobile phone, the input voltage (usually 5V or 9V) needs to be converted to a voltage suitable for charging the battery. MOSFET can be used as a switch in these converters to control the flow of current and achieve efficient power conversion. The low on-resistance of this model helps reduce conversion losses and improve charging efficiency, while the SOT23-3 package is suitable for the small design requirements of mobile phone modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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