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SI2315DS-T1-E3-VB Product details
Back to previous pageProduct introduction：
SI2315DS-T1-E3-VB Application Introduction: SI2315DS-T1-E3-VB is a P-Channel field effect transistor (FET) with a rated voltage of -20V and a rated current of -4A. It uses a SOT23-3 package and has a relatively low on-state resistance, which is suitable for a variety of power management and switch control applications. It has a wide range of application potentials in electronic modules that require high-performance P-Channel MOSFETs, such as power management, load switches, DC-DC converters, etc.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
SI2315DS-T1-E3-VB Parameter Description: - Silkscreen: VB2290 - Brand: VBsemi - Package: SOT23-3 - Channel type: P-Channel - Rated voltage: -20V - Rated current: -4A - On-state resistance (RDS(ON)): 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage (Vth): -0.81V
Domain and module applications：
Applicable fields and module examples: 1. **Power management module:** Since SI2315DS-T1-E3-VB is a P-Channel MOSFET, it can be used in power management modules, especially in applications that require load switches, such as battery charge and discharge management. 2. **DC-DC converter:** SI2315DS-T1-E3-VB for P-Channel MOSFET can be used at the output of the DC-DC converter to achieve efficient power conversion. 3. **Battery protection module:** In load switch and battery protection circuits, SI2315DS-T1-E3-VB can be used to implement low-resistance load switches to ensure safe operation of batteries under different working conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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