中文
English
QM2419K-VB Product details
Back to previous pageProduct introduction：
QM2419K-VB is a P-Channel field effect transistor produced by VBsemi and uses a SOT23-3 package.
File download
Download PDF document
Download now
VBsemi online shopping mall：
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
**Parameter Description:** - Package type: SOT23-3 - Channel type: P-Channel - Rated voltage (VDS): -20V - Rated current (ID): -4A - Switch resistance (RDS(ON)): 80 (mΩ) @ VGS = 2.5V, 65 (mΩ) @ VGS = 4.5V, 60 (mΩ) @ VGS = 10V; VGS = 12V - Threshold voltage (Vth): -0.81V
Domain and module applications：
**Application fields and module examples:** - **Fields:** Electronic equipment, power management, analog circuits, etc. - **Module application examples:** 1. **Power switch module:** Modules suitable for designing load switching power supplies can effectively control current. 2. **Signal amplifier:** In analog circuits, it can be used in P-Channel amplifier modules for signal amplification and processing. 3. **Power inverter:** It can be used in power inverter modules, especially in application scenarios that require load control. The characteristics of the QM2419K-VB enable it to perform well in fields that require current control and power consumption optimization, and is suitable for a variety of circuit designs, especially applications that require P-Channel trench field effect transistors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
