Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
Parameters: - Channel type: P-channel - Rated voltage: -20V - Rated current: -4A - On-resistance (RDS(ON)): 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @ 4.5V, 83mΩ @ 2.5V - Gate-source threshold voltage range (Vth): -0.81V - Gate drive voltage range: ±12V - Package type: SOT23-3
Domain and module applications：
1. **Power Switch**: This MOSFET can be used in power management circuits in portable devices, low-power power supplies, and battery-powered devices. It can implement power switching, battery protection, and energy conversion. 2. **Low-Power Electronics**: The NTR4101PT1G-VB is suitable for electronic devices that require low-power operation, such as sensor nodes, embedded systems, and Internet of Things (IoT) devices. It helps reduce power consumption and extend battery life. 3. **Signal Switch**: In various signal switching applications, this MOSFET can be used as part of signal amplification and switching circuits to control signal transmission and processing. 4. **Charging Protection**: The NTR4101PT1G-VB can also be used in charging circuits to achieve battery charging management and protection, ensuring a safe and efficient charging process. 5. **Driver and Switching Circuits**: This MOSFET can be used in driver and switching circuits, such as motor drives, switch controls, amplifiers, and signal processing.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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