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NTR1P02T1G-VB Product details

Product introduction:

**Application Introduction:** VBsemi's NTR1P02T1G-VB is a P-Channel SOT23-3 package field effect transistor. It has a maximum withstand voltage of -20V and a current withstand capacity of -4A. Its on-resistance is 65 (mΩ), 80 (mΩ) @ VGS = 2.5V, 60 (mΩ) @ VGS = 10V; and the threshold voltage is -0.81V.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
**VBsemi NTR1P02T1G-VB Detailed parameter description:** - **Model:** NTR1P02T1G-VB - **Silkscreen:** VB2290 - **Brand:** VBsemi - **Package:** SOT23-3 - **Channel type:** P—Channel - **Maximum withstand voltage:** -20V - **Maximum current:** -4A - **On-resistance:** RDS(ON)=65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V;@VGS=4.5V, VGS=12V - **Threshold voltage:** Vth=-0.81V

Domain and module applications:

**Application fields and module examples:** 1. **Power switch module:** As NTR1P02T1G-VB has P-Channel and low on-resistance, it is suitable for power switch module to achieve efficient power control. 2. **Power inverter:** In power inverters that require P-Channel, the device can provide reliable current control and power inversion functions. 3. **Battery protection module:** Used in battery protection module, it can realize over-current and over-voltage protection for batteries to ensure safe use of batteries. 4. **Voltage regulator circuit:** As the device withstands high voltage, it is suitable for voltage regulator circuits that require stable output, such as voltage regulators and voltage regulator modules. In general, NTR1P02T1G-VB is suitable for circuit modules that require P-Channel, low on-resistance, power control and protection functions, especially in the fields of power switch, battery protection and voltage regulator circuit, which has a wide range of application potential.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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