Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
Detailed parameter description: - Type: P-channel MOSFET - Maximum withstand voltage: -20V - Maximum current: -4A - On-resistance: 65(mΩ), 80(mΩ)@VGS=2.5V, 60(mΩ)@VGS=10V; @4.5V, 83mΩ @2.5V - Gate-source voltage: 12Vgs (±V) - Gate threshold voltage: -0.81Vth - Package: SOT23-3
Domain and module applications:
The device is suitable for module design in multiple fields, mainly including: 1. Power management module: suitable for low-voltage power management and load switch control. 2. Converter module: can be used for output regulation of low-voltage converters and inverters. 3. Consumer electronics: suitable for low-voltage battery-powered devices and portable electronic products. In short, NTR0202PLT1G is suitable for module design in low-voltage and medium-current application fields, including power management, converter modules and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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