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MI2303-VB Product details

Product introduction:

VBsemi MI2303-VB is a P-Channel field effect transistor in SOT23-3 package. It is suitable for low voltage and low power consumption power management systems, especially in portable devices, wireless communication modules and battery-powered systems. It can also be used in power switches, power inverters and other applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
Its parameters include maximum operating voltage -20V, maximum current -4A, on-resistance RDS(ON) of 80 (mΩ) @ VGS = 2.5V, 65 (mΩ) @ VGS = 4.5V, 60 (mΩ) @ VGS = 10V; VGS = 12V, threshold voltage Vth is -0.81V.

Domain and module applications:

**Examples:** 1. **Portable device module:** Due to its low threshold voltage and low on-resistance, MI2303-VB is suitable for use in power management modules of portable devices, providing efficient energy conversion. 2. **Wireless communication module:** In the power management of wireless communication equipment, this transistor can be used for power switches to help achieve efficient energy consumption. 3. **Battery-powered system:** Due to its low power consumption characteristics, MI2303-VB is suitable for battery-powered systems, extending battery life and improving system stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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