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GE2301-VB Product details

Product introduction:

**Application Introduction:** GE2301-VB is a P-Channel SOT23-3 package MOSFET. Its characteristics include low on-resistance (RDS(ON)) and moderate maximum current. It is suitable for circuit designs that require P-Channel MOSFET.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -20V 12(±V) -0.8V -4A 80(mΩ) 65(mΩ) 60(mΩ)
**Detailed parameter description:** - Product model: GE2301-VB - Brand: VBsemi - Silk screen: VB2290 - Package: SOT23-3 - Channel type: P—Channel - Maximum withstand voltage: -20V - Maximum current: -4A - RDS(ON): 80(mΩ)@VGS=2.5V、65(mΩ)@VGS=4.5V、60(mΩ)@VGS=10V; VGS=12V - Threshold voltage(Vth): -0.81V

Domain and module applications:

1. **Power management module:** Due to its current-carrying capability and low on-resistance, it can be used in power management modules to provide efficient power switch control. 2. **Signal amplifier:** In amplifier circuits that require a P-Channel, GE2301-VB can provide stable performance and is suitable for signal amplification applications. 3. **Current control module:** Due to its low impedance and load adjustment capabilities, it can be used in current control modules to ensure current stability. 4. **Battery management system:** In battery management systems that require high controllability and low power consumption, GE2301-VB can play its advantages.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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