Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
BSS215P-H6327-VB Detailed parameter description: - Model: BSS215P-H6327-VB - Silk screen: VB2290 - Brand: VBsemi - Package: SOT23-3 - Channel type: P-Channel - Maximum operating voltage: -20V - Maximum drain current: -4A - Static drain-source resistance: 80 (mΩ) @VGS=2.5V, 65 (mΩ) @VGS=4.5V, 60 (mΩ) @VGS=10V; VGS=12V - Threshold voltage: -0.81V
Domain and module applications：
Suitable for circuit design requiring P-Channel channel, especially for application scenarios of SOT23-3 package. Common fields and modules include: 1. **Power management module:** Due to its P-Channel channel characteristics, BSS215P-H6327-VB can be used for power switching and regulation circuits to provide efficient energy management. 2. **Low-power devices:** Suitable for electronic devices with high power requirements, such as portable electronics and wireless sensor networks. 3. **Signal switching:** In applications where signals need to be switched quickly and efficiently, such as signal conditioning, amplification and switching circuits. 4. **Embedded systems:** Used in embedded control systems to provide reliable power switching and control.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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