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AO2301-VB Product details
Back to previous pageProduct introduction：
Application Introduction: AO2301 (VB2290) is a P-channel MOSFET suitable for applications that require current control. Its low on-resistance helps reduce power consumption. Commonly used in power management, DC-DC conversion and other fields. Advantages: Low on-resistance: With low on-resistance, it reduces power consumption and energy loss.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
AO2301 (VB2290) parameter description: Polarity: P channel; Rated voltage: -20V; Maximum current: -4A; On-resistance: 80 (mΩ) @ VGS = 2.5V, 65 (mΩ) @ VGS = 4.5V, 60 (mΩ) @ VGS = 10V; Gate-source voltage range: 12Vgs (±V) Threshold voltage: -0.81V; Package: SOT23-3
Domain and module applications：
Applicable package: The small SOT23-3 package is suitable for designs with limited space. Applicable modules: AO2301 (VB2290) is suitable for modules that require high-efficiency power conversion, such as adapters, battery chargers, etc. Its low on-resistance and small package are suitable for high-efficiency conversion in limited space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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