Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-20V |
12（±V） |
-0.8V |
-4A |
80（mΩ） |
65(mΩ) |
60(mΩ) |
|
### Detailed parameter description - **Model**: TP0101TS-T1-VB - **Brand**: VBsemi - **Polarity**: P-Channel - **Maximum voltage (VDS)**: -20V - **Maximum current (ID)**: -4A - **On-resistance (RDS(ON))**: - 80mΩ @ VGS=2.5V - 65mΩ @ VGS=4.5V - 60mΩ @ VGS=10V - **Gate voltage (VGS)**: ±12V - **Threshold voltage (Vth)**: -0.81V - **Package**: SOT23-3
Domain and module applications：
### Applicable fields and modules TP0101TS-T1-VB MOSFET is suitable for the following fields and modules: 1. **Power management module**: It can be used in DC-DC converters, voltage regulator circuits and switching power supplies to provide efficient power conversion and management. 2. **Battery charge and discharge control**: In portable electronic products, wireless sensors and smart home devices, it is used for battery charge and discharge control to extend battery life. 3. **Electric vehicles**: It is suitable for power management and drive control in electric vehicles, electric bicycles and electric scooters to provide efficient power output. 4. **Industrial control system**: In industrial control equipment, robots and automation systems, it is used for motor control, sensor drive and power management to improve system efficiency and reliability. TP0101TS-T1-VB has excellent performance and stability, and is suitable for power management and control applications in a variety of electronic devices and systems, providing efficient and reliable power solutions for applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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