Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-20V |
12(±V) |
-0.8V |
-4A |
80(mΩ) |
65(mΩ) |
60(mΩ) |
|
### Detailed parameter description - **Model**: NDS336P-VB - **Brand**: VBsemi - **Polarity**: P-Channel - **Maximum voltage (VDS)**: -20V - **Maximum current (ID)**: -4A - **On-resistance (RDS(ON))**: - 80mΩ @ VGS=2.5V - 65mΩ @ VGS=4.5V - 60mΩ @ VGS=10V - **Gate voltage (VGS)**: ±12V - **Threshold voltage (Vth)**: -0.81V - **Package**: SOT23-3
Domain and module applications:
### Applicable fields and modules NDS336P-VB MOSFET is suitable for the following fields and modules: 1. **Power management module**: It can be used in DC-DC converters, power switches and battery management systems to provide efficient power conversion and management. 2. **Battery protection circuit**: In mobile power supplies, electric vehicles and battery packs, it is used for current control and protection functions to ensure the safe operation of the battery. 3. **Consumer electronics**: Such as power management and switch modules in tablet computers, smart phones and digital cameras, providing stable and reliable power output. 4. **Industrial automation**: It is suitable for power management and switch control in various industrial control equipment and robot systems to improve the efficiency and reliability of the system. NDS336P-VB has excellent performance and packaging characteristics, and is suitable for power management and switch control in a variety of electronic devices and systems, providing efficient and stable power solutions for applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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