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IRLML6402G-VB Product details
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### IRLML6402G-VB Product Introduction IRLML6402G-VB is a P-Channel MOSFET provided by VBsemi, with a maximum drain-source voltage (Vds) of -20V and a maximum continuous drain current (Id) of -4A. The on-resistance (RDS(ON)) of this model MOSFET shows excellent performance at different gate voltages (Vgs): 80 mΩ at Vgs=2.5V, 65 mΩ at Vgs=4.5V, and 60 mΩ at Vgs=10V. Its gate threshold voltage (Vth) is -0.81V, with a lower turn-on voltage, and can be driven efficiently at lower voltages. The MOSFET is packaged in SOT23-3, which is suitable for compact circuit design requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | 80（mΩ） | 65(mΩ) | 60(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -20V | -0.8V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
### IRLML6402G-VB Detailed parameter description - **Brand**: VBsemi - **Type**: P-Channel MOSFET - **Maximum drain-source voltage (Vds)**: -20V - **Maximum continuous drain current (Id)**: -4A - **On-resistance (RDS(ON)）**: - @Vgs=2.5V: 80 mΩ - @Vgs=4.5V: 65 mΩ - @Vgs=10V: 60 mΩ - **Maximum gate-source voltage (Vgs)**: 12V - **Gate threshold voltage (Vth)**: -0.81V - **Package type**: SOT23-3
Domain and module applications：
### Applications and Modules IRLML6402G-VB P-Channel MOSFET is well suited for use in a variety of applications due to its low on-resistance and low gate threshold voltage. Here are a few examples of specific application areas and modules: 1. **Power Management Module**: This MOSFET can be used in DC-DC converters and load switches to provide efficient power switching and regulation. In portable devices such as notebook computers and smartphones, the IRLML6402G-VB can help implement low-power power management solutions. 2. **Motor Driver**: In small motor driver circuits, the IRLML6402G-VB can act as an efficient switching element to control the start and stop of the motor and provide a stable current output, which is suitable for applications such as drones and electric toys. 3. **LED Driver**: Due to its good current handling capability, this MOSFET is suitable for LED drive circuits, providing precise current control to achieve efficient driving and dimming of LEDs. Suitable for backlight modules of lighting equipment and displays. 4. **Battery protection circuit**: In lithium-ion battery protection circuits, IRLML6402G-VB can quickly respond to changes in voltage and current, protect the battery from overcharge and over-discharge damage, and improve battery safety and life. The versatility and high performance of IRLML6402G-VB make it widely used in modern electronic devices, providing reliable solutions to meet various application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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