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TP0202K-T1-E3-VB Product details

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Product introduction：

TP0202K-T1-E3-VB is a VBsemi brand P-Channel field effect transistor, which is packaged in SOT23-3. - **Power Management:** Suitable for low voltage drop, high efficiency power management circuits. - **Power Amplification:** Available for amplifiers and power amplification modules. - **Switching Power Supply:** Used for designing switching power supplies and DC-DC converters. -

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Product parameter：

VB Package Configuration VDS(V) VGS Vthyp（V） ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -30V 20（±V） -1.7V -5.6A 54(mΩ) 46(mΩ)
**Parameter Description :** -Maximum withstand voltage: -30V-Maximum drain current: -5.6A-open drain-Source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth):-1V

Domain and module applications：

**Domain and module applications:**-**Power module: **Due to its low drain resistance and high withstand voltage characteristics, it is suitable for power module design and improves efficiency.
- **Driver module: **Used in motor drives and other applications requiring high-efficiency power amplification.
- **Switching power supply control: **Used in switching power supplies to achieve stable current and voltage control.
TP0202K-T1-E3-VBSuitable for needsP-Channel MOSFETA variety of application areas, providing high performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support：

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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