Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-30V |
20(±V) |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Detailed parameter description: ** -Package type: SOT23-3 -Channel type: P—Channel -Maximum drain voltage: -30V-Maximum drain current: -5.6A-static drain-Source resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -Gate threshold voltage (Vth):-1V
Domain and module applications:
**Application areas:** 1.
**Power management module: **becauseTM3401GN-VBWith low drain resistance and moderate drain current, it can be used in power management modules to help effectively control the output of the power supply.
2.
**Current control module: **It is suitable for circuits that require effective control of current, such as current sources, current control modules, etc.
3.
**Switching power supply: **In switching power supply,TM3401GN-VBCan be used to control the flow of electricity to help achieve efficient energy conversion.
4.
**Battery management system: **Due to its low resistance and high current capability, it can be used in battery management systems to help manage and control the battery charging and discharging process.
5.
**Low voltage disconnect switch: **Suitable for circuits requiring low voltage disconnect switches with low gate threshold voltage.
Through these characteristics,TM3401GN-VBCan be widely used in various needsP-ChannelField-effect transistors provide stable, efficient performance in electronic devices and modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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