Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
parameter: -Package: SOT23-3 -Channel type: P—Channel -Rated voltage: -30V-Maximum current: -5.6A-static on resistance (RDS(ON)):47mΩ (existVGS=10V, VGS=20Vhour ) -threshold voltage (Vth): -1VPackage:SOT23-3**Detailed parameter description:** 1. **Channel type:**P-Channelchannel, suitable forP-Channel MOSFET, for the part responsible for current flowing through the channel. 2. **Rated voltage:** -30V,expressMOSFETMaximum voltage under normal operating conditions. 3. **Maximum current:** -5.6A,expressMOSFETThe maximum current it can withstand. 4. **static on resistance (RDS(ON)):** 47mΩ,expressMOSFETResistance in the on state. 5. **threshold voltage (Vth):** -1V,expressMOSFETVoltage threshold from off to on.
Domain and module applications：
**Application areas:** 1.
**Power management: **Can be used in power switching modules such as DC-DC converter (DC-DC Converter).
2.
**Current control: **Suitable for circuits requiring current control, such as current sources.
3.
**motor driven: **It can be used as a power switching device for motors in motor control circuits.
**Module application:** 1.
**Power module: **Used in DC power switching modules to ensure efficient power management.
2.
**Driver module: **Can be used to drive modules to control current and power delivery.
3.
**Switch module: **Suitable for various switching circuits, such as switching power supplies, inverters, etc.
Overall,SSM3J331R-VBIt is a multifunctionalP-Channel MOSFET, suitable for a variety of power electronic applications, with low on-resistance and high current handling capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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