Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
parameter: -Channel type: P—Channel -Rated voltage: -30V-Rated current: -5.6A-Turn on the resistor: 47mΩ @ VGS=10V, VGS=20V -Gate-source voltage threshold: Vth=-1VDetailed parameter description: 1. **Channel type**:P—Channel MOSFET, suitable for needsPCircuit design for type transmission conductors. 2. **Rated voltage**:-30V, which can meet the requirements of electronic equipment with power supply voltage. 3. **Rated current**:-5.6A, has a high current carrying capacity and is suitable for scenarios that need to handle large currents. 4. **Turn on resistor**:47mΩ @ VGS=10V, VGS=20V, low turn-on resistance helps reduce power loss and improve efficiency. 5. **Gate-source voltage threshold**:Vth=-1Vlow voltage threshold makes it perform well in low voltage environments.
Domain and module applications：
Application areas: SSM3J321T-VBApplicable to a variety of fields, including but not limited to: - **Power management module**: Due to its low voltage threshold and high current carrying capability, it can be used in power switching and regulating circuits.
**electrical tools**: Able to meet the needs of power tools for high current and withstand voltage.
- **vehicle electronics**: Can be used for power switching and current control in automotive electronic systems.
- **LEDillumination**: Applicable toledDriver circuit provides efficient current control.
Overall,SSM3J321T-VBIt is an excellent performanceMOSFET, suitable for electronic equipment in many fields, and its superior characteristics make it an ideal choice for circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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