Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**parameter: ** -Package: SOT23-3 -Channel type: P—Channel -Rated voltage: -30V-Maximum current: -5.6A-On-resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth):-1V-**Package:** SOT23-3 **Detailed parameter description:** SSM3J14T-VByesVBsemiBrandedP-Channelchannel field effect transistor, usingSOT23-3Encapsulation. Its main electrical characteristics include a rated voltage of-30V, the maximum current is-5.6A, the on-resistance is47mΩ @ VGS=10V, VGS=20V, the threshold voltage is-1V.
Domain and module applications：
This device is commonly found in the following areas and modules: 1.
**Mobile device charging management: **It is suitable for power management of mobile phones, tablets and other mobile devices, and can be used to design charging protection circuits.
2.
**Battery management system: **Due to the low threshold voltage and low on-resistance, the device is suitable for use in battery management systems to provide efficient power switching control.
3.
**Power switch module:** SSM3J14T-VBCan be used to design efficient power switching modules such as voltage regulators and switching power supplies.
4.
**Portable electronic devices: **Suitable for portable electronic equipment, such as digital cameras, portable speakers, etc.
Please note that in specific applications, ensure that according toSSM3J14T-VBSpecifications and design manuals for correct design and use.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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