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SSM2305GN-VB Product details

Product introduction:

**VBsemi SSM2305GN-VB** - **Application Brief:** - High performance P-Channel MOSFET designed for applications requiring high power density and low on-resistance.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A 54(mΩ) 46(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P-Channel
**Parameter Description :** -type : P—Channel MOSFET -Rated voltage (V_DS) : -30V -Rated current ( I_D): -5.6A -Static resistance (RDS(ON)) : 47mΩ @ VGS=10V, VGS=20V -threshold voltage (Vth): -1V - **encapsulation :** -type: SOT23-3

Domain and module applications:

**Field application :** -Power management module -Battery protection circuit -motor driver -DC-DCconverter - **feature :** -Excellent conduction characteristics -Suitable for high power density designs - SOT23-3Package suitable for small electronic devices *Notice :The above information is for reference only, specific applications need to be based on system requirements and design considerations.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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