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SSF3349-VB Product details
Back to previous pageProduct introduction：
Application Introduction: SSF3349-VB is a P-Channel field effect transistor with SOT23-3 package suitable for a variety of electronic applications. Features include low resistance, low threshold voltage and appropriate current and voltage ratings.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
Detailed parameter description: -Silk screen: VB2355 -brand: VBsemi-Package: SOT23-3 -type:P-Channelchannel -Rated voltage: -30V-Maximum current: -5.6A-Turn on the resistor (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V -threshold voltage (vth):-1V
Domain and module applications：
Application areas: 1.
**Power module: **Due to the device's low resistance and high current capability, it can be used in power modules to provide effective current control and low power consumption.
2.
**Current control module: **Suitable for needsP—Channel MOSFETCurrent control circuits, such as current sources, current mirrors, etc.
3.
**Signal switch: **As a signal switch, it can be used in various signal processing and switching circuits.
4.
**Power amplifier: **In some low-power power amplifiers, this device can be used to implement amplification and conditioning.
The above are only general application scenarios, and specific applications need to be determined based on circuit design and requirements.
**Power module: **Due to the device's low resistance and high current capability, it can be used in power modules to provide effective current control and low power consumption.
2.
**Current control module: **Suitable for needsP—Channel MOSFETCurrent control circuits, such as current sources, current mirrors, etc.
3.
**Signal switch: **As a signal switch, it can be used in various signal processing and switching circuits.
4.
**Power amplifier: **In some low-power power amplifiers, this device can be used to implement amplification and conditioning.
The above are only general application scenarios, and specific applications need to be determined based on circuit design and requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
