Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Possible detailed parameter descriptions: SSC8033GS6-VBis a P-Channelchannel MOSFET, applicable to SOT23-3Encapsulation. Its main parameters include maximum withstand voltage -30Vmaximum drain current -5.6A, drain-Source resistance RDS(ON)exist VGS=10Vand VGS=20Vtimes are respectively 47mΩ. threshold voltage vthfor -1V.
Domain and module applications：
Application areas:This product is suitable for needs P-Channel MOSFETcircuit design, especially in applications where load current control is required.
Common application areas include power management, switching power supplies, and power amplifiers.
Notice :Before specific application, please read the product manual and specifications carefully to ensure correct use and performance.
If more detailed information is required, please refer to the relevant technical documentation or contact the manufacturer.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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