Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**SQ2303ES-T1-GE3-VBDetailed parameter description:**-**brand:**VBsemi-**model:** SQ2303ES-T1-GE3-VB - **Silk screen:**VB2355-**Package:**SOT23-3-**type: **P-Channelchannel MOSFET-**Voltage level:** -30V- **Current level:** -5.6A - **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V - **Gate-source voltage threshold (vth):** -1V
Domain and module applications：
**Application areas:** 1.
**Power module: **For use in low power power switches such as portable electronic equipment.
2.
**Battery management: **In the battery protection circuit, the switch control of the battery is realized.
3.
**Small power switching circuit: **Suitable for small power switching circuits, such as switching power supplies and inverters.
**effect: ** -A low power power switch is provided.
-Implement switch control of the battery in the battery management circuit.
-Used for small power switching circuits, supporting switching power supplies and inverters.
The above is a brief description, and the specific design and application need to be carried out according to the specific module and circuit requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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