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Si2377EDS-T1-GE3-VB Product details
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Model: Si2377EDS-T1-GE3-VB Silk screen: VB2355 Brand: VBsemi Si2377EDS-T1-GE3-VB can be used in modules in a variety of fields
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
parameter:SOT23-3;P-Channelchannel,-30V;-5.6A;RDS(ON)=47mΩ@VGS=10V,VGS=20V;Vth=-1V;Package:SOT23-3**Detailed parameter description:** 1. **Model number and silk screen:** Si2377EDS-T1-GE3-VByesVBsemiBrandedP-ChannelChannel field effect transistor (FET), the silk screen isVB2355. 2. **Electrical parameters:**-**Voltage parameters:** -30VWithstand voltage, suitable for lower power applications. - **Current parameters:** -5.6AThe current carrying capacity is suitable for medium power applications. - **On resistance: **existVGS=10Vhour,RDS(ON)for47mΩ, indicating that its resistance in the on-state is relatively low, which helps reduce power consumption and improve efficiency. 3. **Package:** - **SOT23-3: **This is a small surface mount package suitable for space-constrained circuit board designs. 4. **Electrical characteristics:**-**Vth: **The gate threshold voltage is-1V, which refers to the voltage at which the transistor starts to conduct. Negative values indicate that this is aP-Channel FET.
Domain and module applications：
1.
**Power module: **becauseSi2377EDS-T1-GE3-VBexistVGS=10VWith low on-resistance and moderate current carrying capacity, it can be used in power modules for energy efficiency optimization and power consumption reduction.
2.
**Current control module: **Suitable for modules that need to control current flow, such as current control switching power supplies, current amplifiers, etc.
3.
**Low power consumption devices: **Since its gate threshold voltage is-1V, suitable for needsP-Channel FETLow-power electronic devices, such as portable devices, sensor nodes, etc.
Please note that the actual application depends on the specific circuit design requirements and system specifications.
It is recommended to read the product manual and specification sheet carefully before use.
**Power module: **becauseSi2377EDS-T1-GE3-VBexistVGS=10VWith low on-resistance and moderate current carrying capacity, it can be used in power modules for energy efficiency optimization and power consumption reduction.
2.
**Current control module: **Suitable for modules that need to control current flow, such as current control switching power supplies, current amplifiers, etc.
3.
**Low power consumption devices: **Since its gate threshold voltage is-1V, suitable for needsP-Channel FETLow-power electronic devices, such as portable devices, sensor nodes, etc.
Please note that the actual application depends on the specific circuit design requirements and system specifications.
It is recommended to read the product manual and specification sheet carefully before use.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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