SI2347DS-T1-GE3-VB Product details
Product introduction:
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
Domain and module applications:
Power module: this oneMOSFETIt can be used in power switches in power modules to help improve the efficiency of power management and is suitable for portable devices, embedded systems and power inverters.
2.
DC-DCconverter:SI2347DS-T1-GE3-VBcan be used forDC-DCIn the converter, one voltage is converted into another voltage, which is suitable for battery-driven equipment, electronic terminals and communication equipment.
3.
Battery management: It can also be used in battery management systems to control the charging and discharging of batteries to ensure battery safety and performance.
4.
Automotive Electronics: Due to its low on-resistance and voltage characteristics, thisMOSFETAlso suitable for automotive electronic systems such as vehicle power management and drive control.
5.
Low-power electronics: Due to its low on-resistance and low-voltage characteristics, it is suitable for electronic devices that require low-power operation, such as sensor nodes, portable medical equipment, and wireless communication modules.
SI2347DS-T1-GE3-VBproperties make it suitable for a variety of low to medium power electronic applications, especially wherePchannelMOSFETin the case of.
However, when selecting and using this device, a detailed understanding of its data sheet and performance parameters is still required to ensure that it meets the requirements of a specific application.
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