Product parameter:
VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
SOT23-3 |
Single-P-Channel |
-30V |
20(±V) |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**Detailed parameter description: ** -model: SI2343DS-T1-GE3-VB -Silk screen: VB2355 -brand: VBsemi-Package: SOT23-3 -type:P-Channelchannel -Rated voltage:**Detailed parameter description: ** -model: SI2343DS-T1-GE3-VB -Silk screen: VB2355 -brand: VBsemi-Package: SOT23-3 -type:P-Channelchannel -Rated voltage: -30V-Rated current: -5.6A-On resistance: 47mΩ @ VGS=10V, VGS=20V -Threshold voltage:-1V
Domain and module applications:
**Application areas: **This device is commonly used in modules in the fields of low-power power switches, signal amplification, and current control.
In these modules, it can be used for low-power switching regulation, small signal amplification and current control.
**effect: ** -In the low-power power switch module, it can be used for the regulation and control of low-power switching power supplies.
-In the low-power signal amplification module, it can be used to amplify low-power signals.
-In the low-power current control module, it can be used for low-power current control.
**Precautions for use: ** -Strictly follow the maximum ratings provided in the data sheet to prevent device damage.
-Pay attention to the electrostatic sensitivity of the device and take appropriate protective measures.
-Consider heat dissipation and temperature management in the design to ensure that the device is within the normal operating temperature range.
-Follow proper welding and installation standards to ensure reliable electrical connections and mechanical strength.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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