Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
SI2319DS-T1-GE3Detailed parameter description:-polarity:Pchannel -Rated voltage: -30V-Rated current: -5.6A-On resistance: 47mΩ @ 10V, 56mΩ @ 4.5V -Gate-source voltage: 20Vgs (±V) -Threshold voltage: -1Vth (V) -Package type:SOT23-3
Domain and module applications：
SI2319DS-T1-GE3useSOT23-3Package, suitable for use in various circuit boards and modules.
This device is widely used in power switches, power inverters, motor drivers and other fields.
Due to its negative rated voltage and current characteristics,SI2319DS-T1-GE3Particularly suitable for circuit applications requiring control and switching of negative voltages.
In these areas, it provides reliable power switching control and current transfer at negative voltages.
In short,SI2319DS-T1-GE3is aPchannelMOSFET, suitable for application modules such as power management and power amplifiers.
It is especially suitable for areas where negative voltage needs to be controlled and switched, such as power switches, motor drives, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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