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SI2319DS-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Application Brief: SI2319DS-T1-GE3 is a P-channel MOSFET suitable for a variety of power management and power amplifier applications. It has negative voltage and current ratings to provide reliable and efficient current switching. By controlling the gate-source voltage of 20Vgs (±V), the switching tube can be turned on and off to realize current control and switching state conversion. Its lower on-resistance reduces power consumption and increases system efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
SI2319DS-T1-GE3Detailed parameter description:-polarity:Pchannel -Rated voltage: -30V-Rated current: -5.6A-On resistance: 47mΩ @ 10V, 56mΩ @ 4.5V -Gate-source voltage: 20Vgs (±V) -Threshold voltage: -1Vth (V) -Package type:SOT23-3
Domain and module applications：
SI2319DS-T1-GE3useSOT23-3Package, suitable for use in various circuit boards and modules.
This device is widely used in power switches, power inverters, motor drivers and other fields.
Due to its negative rated voltage and current characteristics,SI2319DS-T1-GE3Particularly suitable for circuit applications requiring control and switching of negative voltages.
In these areas, it provides reliable power switching control and current transfer at negative voltages.
In short,SI2319DS-T1-GE3is aPchannelMOSFET, suitable for application modules such as power management and power amplifiers.
It is especially suitable for areas where negative voltage needs to be controlled and switched, such as power switches, motor drives, etc.
This device is widely used in power switches, power inverters, motor drivers and other fields.
Due to its negative rated voltage and current characteristics,SI2319DS-T1-GE3Particularly suitable for circuit applications requiring control and switching of negative voltages.
In these areas, it provides reliable power switching control and current transfer at negative voltages.
In short,SI2319DS-T1-GE3is aPchannelMOSFET, suitable for application modules such as power management and power amplifiers.
It is especially suitable for areas where negative voltage needs to be controlled and switched, such as power switches, motor drives, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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