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SI2307BDS-T1-GE3-VB Product details

Product introduction:

VBsemi SI2307BDS-T1-GE3-VB is a P-Channel channel field effect transistor. This device is suitable for various power management and switching applications, especially where P-Channel MOSFET is required. Due to its low on-resistance and high current carrying capacity, it is suitable for scenarios requiring efficient energy conversion.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -30V 20(±V) -1.7V -5.6A 54(mΩ) 46(mΩ)
Has the following main parameters: - **Voltage level(VDS):** -30V- **Current level (ID):** -5.6A - **On-resistance (RDS(ON)):** 47mΩ(existVGS=10VHas the following main parameters: - **Voltage level(VDS):** -30V- **Current level (ID):** -5.6A - **On-resistance (RDS(ON)):** 47mΩ(existVGS=10V, VGS=20Vhour) - **threshold voltage (vth):** -1V **Package:**SOT23-3

Domain and module applications:

**Main areas and modules:** 1.
**Power management module: **Used in switching power supplies, battery management systems, etc.
2.
**Current control module: **Suitable for needs P-Channel MOSFETcurrent control circuit.
3.
**DC-DCConverter: **for building efficient DC-DCconverter.
4.
**Power inverter: **Plays a key role in the inverter circuit to help achieve DC to AC conversion.
This device can be widely used in electronic equipment to provide efficient power management and switching control for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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