Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
Parameter Description: -polarity:Pchannel -Rated voltage: -30V-Maximum continuous drain current: -5.6A-static drain-Source resistance (RDS(ON)):47mΩ@10V, 56mΩ @ 4.5V -Gate-Source voltage (Vgs):20V(±V) -Turn-on voltage (gate threshold voltage): -1V-Package:SOT23-3
Domain and module applications：
1.
**Power module**:becauseRQJ0303PGDQATL-E-VBHas low drain-Source resistor, which is suitable for switching power supplies and battery management systems, helping to improve energy conversion efficiency.
2.
**DC-DCconverter**: this kindMOSFETDevices are available forDC-DCIn converters, they are used to adjust voltage and current to meet the needs of various electronic devices.
3.
**battery protection**: In portable devices and battery-powered applications,RQJ0303PGDQATL-E-VBCan be used in battery protection circuits to ensure battery safety and reliability.
4.
**motor control**: It can also be used for small motor controls and drives such as fans, vibration motors and small power tools.
5.
**signal switch**Among various electronic devices, thisMOSFETCan be used for signal switching and circuit protection to achieve high performance and low power consumption.
In short,RQJ0303PGDQATL-E-VBIt is a multifunctionalPchannelMOSFETdevices for a variety of applications requiring high performance, low resistance and reliability.
It can be used in a variety of electronic modules such as power management, battery protection, motor control, signal switches, etc.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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