Product introduction：
**Application Brief:** This device is suitable for a variety of power management and power amplification applications, especially in circuits requiring P-Channel MOSFET, which can provide efficient and reliable performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P-Channel |
-30V |
20（±V） |
-1.7V |
-5.6A |
|
54(mΩ) |
46(mΩ) |
|
**VBsemi ME2313-VB** - **Package type:** SOT23-3-**Channel type:** P-Channel - **Maximum withstand voltage:** -30V-**Maximum leakage current:** -5.6A - **On-resistance (RDS(ON)):** 47mΩ @ VGS=10V, VGS=20V - **threshold voltage (Vth):** -1V **Detailed parameter description:** ME2313-VByesVBsemiBrandedP-ChannelChannel powerMOSFET,useSOT23-3Encapsulation. with maximum-30Vpressure resistance, maximum-5.6Aleakage current, and the10Vand20Vtimely47mΩOn-resistance. The threshold voltage is-1V, suitable for applications requiring high performanceP-Channel MOSFETcircuit design.
Domain and module applications：
**Application areas:** 1.
**switch :**Used in switching power supplies and voltage regulators.
2.
**motor driven :**Used for load switching in motor control.
3.
**LEDillumination :**Applicable toledDrive circuit.
4.
**Charging management :**Charge management circuits in mobile devices and power tools.
5.
**Power inverter :**In the inverter and DC-Used in AC converters.
**Notice :**In your design, please carefully select and use this device based on specific circuit requirements and operating conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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