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HM3415E-VB Product details

Product introduction:

VBsemi HM3415E-VB is a P-Channel field effect transistor in SOT23-3 package. - **Application Profile:** - **Field:** Suitable for power management and switching power supply applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A 54(mΩ) 46(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-3 Single-P-Channel Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-3 Single-P-Channel -30V -1.7V -5.6A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-3 Single-P-Channel
**Parameter description:** - Rated voltage (Vds): -30V - Rated current (Id): -5.6A - On-state resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V - Threshold voltage ( Vth): -1V

Domain and module applications:

**Module application: **due to itsP-ChannelDesigned to be used in power switches and inverter modules, especially in circuits requiring load switching.
The device excels in circuits requiring load switching, especially in applications requiring low on-state resistance and high efficiency, such as power switches, inverters and other power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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