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CHM2305PT-VB Product details
Back to previous pageProduct introduction：
### CHM2305PT-VB Model: CHM2305PT-VB Silk screen: VB2355 Brand: VBsemi Application introduction: CHM2305PT-VB is a P-Channel field effect transistor in SOT23-3 package, with low on-resistance and suitable for load switches, etc. Application characteristics. Detailed parameter description: 1. **Package type:** SOT23-3 2. **Channel type:** P—Channel 3. **Rated voltage:** -30V 4. **Rated current:** - 5.6A 5. **On resistance:** RDS(ON)=47mΩ @ VGS=10V, VGS=20V 6. **Threshold voltage:** Vth=-1V
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | 54(mΩ) | 46(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel | -30V | -1.7V | -5.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-3 | Single-P-Channel |
parameter: -Package type: SOT23-3 -Channel type: P—Channel -Rated voltage: -30V-Rated current:-5.6A-RDS(ON): 47mΩ @ VGS=10V, VGS=20V -Threshold voltage: Vth=-1V
Domain and module applications：
Domains and module applications: CHM2305PT-VBSuitable for needsP-ChannelChannel field effect transistors are used in various electronic devices and modules, especially in areas with low voltage and low power consumption requirements.
Here are some possible application scenarios: 1.
**Load switch: **Due to its low on-resistance andP-ChannelDesigned for use in load switching circuits and can be used to control the load in the circuit.
2.
**Power management: **In the power management module, it is particularly necessary toP—Channel MOSFETapplications, such as low voltage circuit breakers and power switches.
Please note that specific applications and module selections may vary based on specific design needs and circuit requirements.
It is recommended to consult the product manual and specifications before use to ensure proper application and operation.
Here are some possible application scenarios: 1.
**Load switch: **Due to its low on-resistance andP-ChannelDesigned for use in load switching circuits and can be used to control the load in the circuit.
2.
**Power management: **In the power management module, it is particularly necessary toP—Channel MOSFETapplications, such as low voltage circuit breakers and power switches.
Please note that specific applications and module selections may vary based on specific design needs and circuit requirements.
It is recommended to consult the product manual and specifications before use to ensure proper application and operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
